IXFH110N25T
Fig. 1. Output Characteristics @ T J = 25oC
250
Fig. 2. Extended Output Characteristics @ T J = 25oC
100
80
V GS = 10V
8V
7V
6V
200
V GS = 10V
8V
7V
150
60
40
5.5V
100
6V
20
0
5V
50
0
5V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
2
4
6
8
10
12
14
16
18
20
V DS - Volts
Fig. 3. Output Characteristics @ T J = 125oC
3.2
V DS - Volts
Fig. 4. R DS(on) Normalized to I D = 55A Value vs.
Junction Temperature
100
80
60
40
V GS = 10V
8V
7V
6V
5V
2.8
2.4
2.0
1.6
V GS = 10V
I D = 110A
I D = 55A
1.2
20
0
0.8
0.4
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
150
3.4
V DS - Volts
Fig. 5. R DS(on) Normalized to I D = 55A Value vs.
Drain Current
80
T J - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.0
V GS = 10V
T J = 125oC
70
External Lead Current Limit
2.6
60
50
2.2
40
1.8
30
1.4
1.0
0.6
T J = 25oC
20
10
0
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
150
I D - Amperes
? 2012 IXYS CORPORATION, All Rights Reserved
T C - Degrees Centigrade
相关PDF资料
IXFH11N80 MOSFET N-CH 800V 11A TO-247AD
IXFH120N25T MOSFET N-CH 250V 120A TO-247
IXFH12N100F MOSFET N-CH 1000V 12A TO-247AD
IXFH12N100P MOSFET N-CH 1000V 12A TO-247
IXFH12N120 MOSFET N-CH 1200V 12A TO-247
IXFH12N80P MOSFET N-CH 800V 12A TO-247
IXFH12N90P MOSFET N-CH 900V 12A TO-247
IXFH12N90 MOSFET N-CH 900V 12A TO-247AD
相关代理商/技术参数
IXFH11N100 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH11N60 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH11N80 功能描述:MOSFET 11 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH11N90 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH120N15P 功能描述:MOSFET 120 Amps 150V 0.016 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH120N20P 功能描述:MOSFET 120 Amps 200V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH120N20P_10 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Polar HiPerFET Power MOSFET
IXFH120N25T 功能描述:MOSFET Trench HiperFETs Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube